WED3DG6435V10JD1-GG
Synchronous DRAM Module, 32MX8, 5.4ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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The Microsemi Corporation WED3DG6435V10JD1-GG is a 256 Megabit Synchronous DRAM Module, organized as 32M x 8 bits. This component operates in CMOS technology with a maximum access time of 5.4 nanoseconds, supporting dual bank page burst access mode. It features auto/self refresh capabilities and is designed for environments requiring LG-MAX and WD-MAX performance. The module operates within a temperature range of 0°C to 70°C and utilizes a 3.3V nominal supply voltage. Common applications for this type of memory include industrial automation, telecommunications infrastructure, and embedded systems. The component is housed in a 144-terminal DIMM package.
Additional Information
Series: WED3DG6435RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 3.8100 |
| Technology | CMOS |
| Length | 67.7200 |
| Access_Mode | DUAL BANK PAGE BURST |
| Access_Time_Max | 5.4000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH; LG-MAX; WD-MAX |
| JESD_30_Code | R-XDMA-N144 |
| Memory_Density | 268435456.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 32MX8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 144 |
| Number_of_Words | 33554432.0000000000000000 |
| Number_of_Words_Code | 32M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Seated_Height_Max | 31.7500 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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