WED3DG6418V75D1I
Synchronous DRAM Module, 16MX64, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation WED3DG6418V75D1I is a 16Mx64 Synchronous DRAM Module utilizing CMOS technology. This module operates in synchronous mode with a 144-terminal configuration and supports a four-bank page burst access mode. Key features include auto/self-refresh capabilities and a nominal supply voltage of 3.3V, with a range of 3.0V to 3.6V. The memory density is 1 Gbit, organized as 16 million words by 64 bits. This component is found in applications such as industrial control systems and telecommunications infrastructure.
Additional Information
Series: WED3DG6418RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N144 |
| Memory_Density | 1073741824.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 16MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 144 |
| Number_of_Words | 16777216.0000000000000000 |
| Number_of_Words_Code | 16m |
| Operating_Mode | Synchronous |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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