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WED3DG6418V10D2

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WED3DG6418V10D2

Synchronous DRAM Module, 16MX64, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation WED3DG6418V10D2 is a 16Mx64 Synchronous DRAM Module operating in CMOS technology. This module, part of the WED3DG6418 series, features a four-bank page burst access mode and supports auto/self-refresh functionalities. With a memory organization of 16Mx64 and a total memory density of 1073741824 bits, it provides 16777216 words. Designed for a supply voltage range of 3.0V to 3.6V, with a nominal 3.3V, and operating temperatures between 0°C and 70°C. The module utilizes a 168-terminal DIMM package and is suitable for applications requiring high-speed data buffering and storage, commonly found in computing systems and networking infrastructure.

Additional Information

Series: WED3DG6418RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N168
Memory_Density1073741824.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization16MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words16777216.0000000000000000
Number_of_Words_Code16m
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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