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WED3DG6418V10D1

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WED3DG6418V10D1

Synchronous DRAM Module, 16MX64, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation WED3DG6418V10D1 is a 1073741824-bit (1Gbit) Synchronous DRAM module from the WED3DG6418 series. This component features a 16M x 64 memory organization, operating with CMOS technology. It supports a FOUR BANK PAGE BURST access mode and incorporates AUTO/SELF REFRESH functionality. The module is designed for synchronous operation with a nominal supply voltage of 3.3V, accommodating a range from 3.0V to 3.6V. It operates within a temperature range of 0°C to 70°C. The WED3DG6418V10D1 is housed in a 144-terminal DIMM package, specified under JESD-30 Code R-XDMA-N144. This component is suitable for applications in industrial computing, networking, and consumer electronics.

Additional Information

Series: WED3DG6418RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N144
Memory_Density1073741824.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization16MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals144
Number_of_Words16777216.0000000000000000
Number_of_Words_Code16m
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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