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WED3DG64128V10D1I

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WED3DG64128V10D1I

Synchronous DRAM Module, 128MX64, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation WED3DG64128V10D1I is a 128M x 64 Synchronous DRAM Module from the WED3DG64128 series. This CMOS component offers a memory density of 8589934592 bits with a four-bank page burst access mode. It supports auto/self refresh functionality and operates synchronously. The module is presented in a 144-terminal DIMM package. Key specifications include a supply voltage range of 3.000V to 3.600V, with a nominal voltage of 3.3V. This component is suitable for applications in networking, telecommunications, and industrial automation.

Additional Information

Series: WED3DG64128RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N144
Memory_Density8589934592.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization128MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals144
Number_of_Words134217728.0000000000000000
Number_of_Words_Code128M
Operating_ModeSynchronous
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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