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WED3DG639V75D2I

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WED3DG639V75D2I

Synchronous DRAM Module, 8MX64, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation WED3DG639V75D2I is a 512 Megabit Synchronous DRAM Module with an 8Mx64 memory organization. This CMOS component operates in a four-bank page burst mode, supporting auto and self-refresh functionalities. It features a 168-terminal interface and is designed for applications requiring high-speed memory access. The operating temperature range is from -40°C to +85°C, with a nominal supply voltage of 3.3V, capable of handling up to 3.6V. This module is commonly utilized in computing, networking, and industrial automation systems where robust and efficient memory solutions are critical. The WED3DG639 series leverages advanced CMOS technology for reliable performance.

Additional Information

Series: WED3DG639RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N168
Memory_Density536870912.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization8MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words8388608.0000000000000000
Number_of_Words_Code8M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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