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WED3DG6366V7D2F

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WED3DG6366V7D2F

Synchronous DRAM Module, 64MX8, 5.4ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation WED3DG6366V7D2F is a 536,870,912-bit Synchronous DRAM Module featuring a 64Mx8 memory organization. This CMOS component offers a maximum access time of 5.4ns and operates with a dual bank page burst access mode. It supports auto and self-refresh functions, along with LG-MAX and WD-MAX features. The module is housed in a 168-terminal DIMM package and operates within a temperature range of 0°C to 70°C, with a supply voltage range of 3.0V to 3.6V nominal at 3.3V. This component is utilized in applications requiring high-speed memory, such as telecommunications infrastructure, industrial control systems, and networking equipment.

Additional Information

Series: WED3DG6366V7D2FRoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length133.4800
Width2.5400
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max5.4000000000000000
Additional_FeatureAUTO/SELF REFRESH; LG-MAX; WD-MAX
JESD_30_CodeR-XDMA-N168
Memory_Density536870912.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization64MX8
Memory_Width8
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Seated_Height_Max30.4800
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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