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WED3DG6366V7D2

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WED3DG6366V7D2

Synchronous DRAM Module, 64MX64, 5.4ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation WED3DG6366V7D2 is a 4Gb Synchronous DRAM Module from the WED3DG6366 series. This CMOS component features a 64Mx64 memory organization, providing a data width of 64 bits and a density of 4294967296 bits. It operates with a maximum access time of 5.4ns and supports a four-bank page burst access mode. The module includes auto and self-refresh functionalities and is supplied in a 168-terminal DIMM package. Operating within a temperature range of 0°C to 70°C, it requires a supply voltage between 3.0V and 3.6V, with a nominal voltage of 3.3V. This component is utilized in various applications including networking equipment, industrial control systems, and high-performance computing.

Additional Information

Series: WED3DG6366RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max5.4000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N168
Memory_Density4294967296.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization64MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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