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WED3DG6366V10D2

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WED3DG6366V10D2

Synchronous DRAM Module, 64MX64, 6ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation WED3DG6366V10D2 is a 64Mx64 Synchronous DRAM module with a maximum access time of 6ns. This CMOS component, part of the WED3DG6366 series, features a four-bank page burst access mode and supports auto/self refresh. It operates within a temperature range of 0°C to 70°C and requires a supply voltage between 3.0V and 3.6V, with a nominal 3.3V. The module is presented in a 168-terminal DIMM package. Applications for this type of memory component include telecommunications infrastructure and industrial control systems.

Additional Information

Series: WED3DG6366RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max6.0000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N168
Memory_Density4294967296.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization64MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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