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WED3DG6363V7D2

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WED3DG6363V7D2

Synchronous DRAM Module, 64MX64, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation's WED3DG6363V7D2 is a 4Gb Synchronous DRAM Module from the WED3DG6363 series. This CMOS component offers a 64Mx64 memory organization, providing a 64-bit data width. It features a FOUR BANK PAGE BURST access mode, supporting both AUTO and SELF REFRESH functionalities. The module operates within a supply voltage range of 3.0V to 3.6V, with a nominal voltage of 3.3V, and an operating temperature range of 0°C to 70°C. Designed for applications requiring high-speed data buffering and storage, this module is commonly found in telecommunications infrastructure, networking equipment, and high-performance computing systems. The component conforms to the R-XDMA-N168 JESD-30 code and utilizes a 168-terminal DIMM package.

Additional Information

Series: WED3DG6363RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N168
Memory_Density4294967296.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization64MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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