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WED3DG634V75D2

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WED3DG634V75D2

Synchronous DRAM Module, 4MX64, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation WED3DG634V75D2 is a 268Mbit Synchronous DRAM Module with a 4M x 64 organization, utilizing CMOS technology. This module operates synchronously and features a four-bank page burst access mode. It supports auto and self-refresh functionalities, enhancing data retention and power management. The WED3DG634 series component is housed in a 168-terminal DIMM package, designed for through-hole mounting. Operating within a temperature range of 0°C to 70°C, it requires a supply voltage between 3.0V and 3.6V, with a nominal 3.3V. This component is suitable for applications in computing, networking, and industrial systems requiring high-speed memory solutions.

Additional Information

Series: WED3DG634RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N168
Memory_Density268435456.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization4MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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