WED3DG634V10D2
Synchronous DRAM Module, 4MX64, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation's WED3DG634V10D2 is a 256 Mbit Synchronous DRAM Module, organized as 4M words by 64 bits. This CMOS module operates with a four-bank page burst access mode and supports auto/self-refresh functionalities. It features a 168-terminal configuration and is designed for applications requiring reliable memory solutions. TheWED3DG634 series component operates within a temperature range of 0°C to 70°C and utilizes a supply voltage between 3.0V and 3.6V, with a nominal voltage of 3.3V. This memory IC is found in industrial automation, data acquisition systems, and embedded computing platforms.
Additional Information
Series: WED3DG634RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N168 |
| Memory_Density | 268435456.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 4MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 168 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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