WED3DG6335V10D2
Synchronous DRAM Module, 32MX64, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
Quality Control: Learn More
The Microsemi Corporation WED3DG6335V10D2 is a 3.3V CMOS Synchronous DRAM Module with a memory organization of 32M x 64. This module provides 2Gb of memory capacity and operates with a four-bank page burst access mode. Key features include auto and self-refresh capabilities, supporting continuous operation in demanding environments. Designed for applications requiring high-speed data access and reliability, this module is suitable for use in industrial, telecommunications, and high-performance computing systems. The component utilizes a 168-terminal DIMM package and operates within a temperature range of 0.0°C to 70.0°C.
Additional Information
Series: WED3DG6335RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N168 |
| Memory_Density | 2147483648.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 32MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 168 |
| Number_of_Words | 33554432.0000000000000000 |
| Number_of_Words_Code | 32M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
Request a Quote
Clients Also Buy
WED3DG6335V7D2
Synchronous DRAM Module, 32MX64, CMOS
WED3DG6335V75D2
Synchronous DRAM Module, 32MX64, CMOS
W3EG72125S335JD3SG
DDR DRAM Module, 128MX72, 0.7ns, CMOS