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WED3DG6317V75D2I

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WED3DG6317V75D2I

Synchronous DRAM Module, 16MX64, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation WED3DG6317V75D2I is a 16Mx64 Synchronous DRAM Module, utilizing CMOS technology. This module operates with a four-bank page burst access mode, supporting auto and self-refresh functionalities. It features a memory density of 1073.74 Mb and a word count of 16M, organized as 16 million words by 64 bits. The operating mode is synchronous, and the module is housed in a 168-terminal DIMM package. Supply voltage ranges from 3.0V to 3.6V, with a nominal of 3.3V. This component is suitable for applications in networking infrastructure, industrial automation, and embedded systems, where high-speed memory is critical.

Additional Information

Series: WED3DG6317RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N168
Memory_Density1073741824.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization16MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words16777216.0000000000000000
Number_of_Words_Code16m
Operating_ModeSynchronous
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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