WED3DG6316V10D2I
Synchronous DRAM Module, 16MX64, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation WED3DG6316V10D2I is a 16Mx64 Synchronous DRAM Module utilizing CMOS technology. This module offers a memory density of 1 Gigabyte, organized as 16 million words with a 64-bit data width. It operates in synchronous mode with a four-bank page burst access mode and supports auto/self-refresh functionalities. The WED3DG6316 series component is housed in a 168-terminal DIMM package, designed for non-surface-mount applications. Operating temperature ranges from -40°C to +85°C, with a nominal supply voltage of 3.3V, capable of handling up to 3.6V. This component is suitable for applications in computing, networking, and industrial systems requiring high-speed memory solutions.
Additional Information
Series: WED3DG6316RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N168 |
| Memory_Density | 1073741824.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 16MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 168 |
| Number_of_Words | 16777216.0000000000000000 |
| Number_of_Words_Code | 16m |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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