WED3DG63126V10D2
Synchronous DRAM Module, 128MX64, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation WED3DG63126V10D2 is a Synchronous DRAM Module designed for high-performance computing and industrial applications. This 128M x 64 memory module operates with a CMOS technology and features a four-bank page burst access mode. The WED3DG63126 series component offers auto and self-refresh capabilities, ensuring data integrity. It is housed in a 168-terminal DIMM package with a rectangular shape and dual terminal positioning. Operating within a temperature range of 0°C to 70°C, this module supports supply voltages from 3.0V to 3.6V, with a nominal voltage of 3.3V. Its memory density is 8Gb, organized as 128M words with a 64-bit width.
Additional Information
Series: WED3DG63126RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N168 |
| Memory_Density | 8589934592.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 128MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 168 |
| Number_of_Words | 134217728.0000000000000000 |
| Number_of_Words_Code | 128M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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