W3J512M64K-1066LBM
DDR3L DRAM, 512MX64, CMOS, PBGA543Manufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation W3J512M64K-1066LBM is a 4Gb DDR3L DRAM component with a 512M x 64 memory organization. This CMOS technology device operates synchronously with a nominal supply voltage of 1.35V, supporting a range of 1.283V to 1.45V. It features a PBGA543 package with a 1.00mm terminal pitch and a rectangular grid array shape. The component supports auto and self-refresh functions, along with LG-MAX and WD-MAX modes. Operating across an extended temperature range of -55°C to +125°C, this component is suitable for demanding applications in sectors such as industrial automation, telecommunications, and defense. The W3J512M64 series device offers a single bank page burst access mode.
Additional Information
Series: W3J512M64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 23.1000 |
| Technology | CMOS |
| Length | 32.1000 |
| Access_Mode | SINGLE BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED |
| JESD_30_Code | R-PBGA-B543 |
| Memory_Density | 34359738368.0000000000000000 |
| Memory_IC_Type | DDR3L DRAM |
| Memory_Organization | 512MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 543 |
| Number_of_Words | 536870912.0000000000000000 |
| Number_of_Words_Code | 512M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Seated_Height_Max | 3.0000 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 1.45000 |
| Supply_Voltage_Min | 1.28300 |
| Supply_Voltage_Nom | 1.35 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.000 |
| Terminal_Position | Bottom |
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