W3HG64M72EER806PD4ISG
DDR DRAM Module, 64MX72, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
Quality Control: Learn More
Microsemi Corporation W3HG64M72EER806PD4ISG is a 64MX72 DDR DRAM Module utilizing CMOS technology. This module features a 200-terminal configuration, operating in synchronous mode with single bank page burst access. It supports auto and self-refresh functionalities. The memory density is approximately 4.83 Gbits, with an organization of 64M words by 72 bits. This component is suitable for applications in aerospace and defense, as well as high-reliability computing systems. The module operates with a nominal supply voltage of 1.8V, ranging from 1.70V to 1.90V.
Additional Information
Series: W3HG64M72RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | SINGLE BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N200 |
| Memory_Density | 4831838208.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 64MX72 |
| Memory_Width | 72 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 200 |
| Number_of_Words | 67108864.0000000000000000 |
| Number_of_Words_Code | 64M |
| Operating_Mode | Synchronous |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 1.90000 |
| Supply_Voltage_Min | 1.70000 |
| Supply_Voltage_Nom | 1.8 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
Request a Quote
Clients Also Buy
W3HG64M72EEU403PD4TGG
DDR DRAM Module, 64MX72, 0.6ns, CMOS, PDMA200
W3HG64M72EEU403PD4GG
DDR DRAM Module, 64MX72, 0.6ns, CMOS
W3HG64M72EEU534PD4GG
DDR DRAM Module, 64MX72, 0.5ns, CMOS