W3HG64M64EEU806D4MG
DDR DRAM Module, 64MX64, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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The Microsemi Corporation W3HG64M64EEU806D4MG is a high-performance DDR DRAM module from the W3HG64M64 series. This component features a 64M x 64 memory organization, providing a total memory density of 4Gb. Operating in synchronous mode, it supports single bank page burst access and incorporates auto/self-refresh functionality. The module utilizes CMOS technology and operates with a nominal supply voltage of 1.8V, with a range from 1.70V to 1.90V. It is housed in a 200-terminal DIMM package. Applications for this DDR DRAM module include high-performance computing, networking infrastructure, and industrial automation systems.
Additional Information
Series: W3HG64M64RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | SINGLE BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N200 |
| Memory_Density | 4294967296.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 64MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 200 |
| Number_of_Words | 67108864.0000000000000000 |
| Number_of_Words_Code | 64M |
| Operating_Mode | Synchronous |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 1.90000 |
| Supply_Voltage_Min | 1.70000 |
| Supply_Voltage_Nom | 1.8 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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