W3HG64M64EEU665D6GG
DDR DRAM Module, 64MX64, 0.45ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation W3HG64M64EEU665D6GG is a 4Gb DDR DRAM module from the W3HG64M64 series. This CMOS component features a 64 Megaword x 64-bit organization, providing a total memory density of 4Gb. It supports a maximum access time of 0.45ns and operates in synchronous mode with a four-bank page burst access mode. The module includes auto and self-refresh capabilities. Designed for a voltage range of 1.7V to 1.9V (nominal 1.8V), it operates within a temperature range of 0°C to 85°C. This component is suitable for applications in industrial and telecommunications sectors requiring high-speed memory solutions.
Additional Information
Series: W3HG64M64RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 0.4500000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N240 |
| Memory_Density | 4294967296.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 64MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 240 |
| Number_of_Words | 67108864.0000000000000000 |
| Number_of_Words_Code | 64M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 1.90000 |
| Supply_Voltage_Min | 1.70000 |
| Supply_Voltage_Nom | 1.8 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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