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W3HG64M64EEU534D4MG

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W3HG64M64EEU534D4MG

DDR DRAM Module, 64MX64, 0.5ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation W3HG64M64EEU534D4MG is a DDR DRAM Module from the W3HG64M64 series. This component features a memory organization of 64M x 64, providing a total memory density of 4294967296 bits. Operating in synchronous mode, it supports a maximum access time of 0.5ns and utilizes CMOS technology. Key features include AUTO/SELF REFRESH capabilities and a supply voltage range of 1.70V to 1.90V, with a nominal voltage of 1.8V. The module is designed with a 200-terminal DIMM package suitable for microelectronic assembly. This component finds application in industries such as telecommunications, industrial automation, and embedded systems where high-speed memory is critical.

Additional Information

Series: W3HG64M64RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeSINGLE BANK PAGE BURST
Access_Time_Max0.5000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N200
Memory_Density4294967296.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization64MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals200
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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