Home

Products

Integrated Circuits (ICs)

Memory

DRAMs

W3HG264M72EEU806PD4GG

Banner
productimage

W3HG264M72EEU806PD4GG

DDR DRAM Module, 128MX72, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

Quality Control: Learn More

The Microsemi Corporation W3HG264M72EEU806PD4GG is a 128MX72 DDR DRAM module utilizing CMOS technology. This synchronous memory component features a dual bank page burst access mode and supports auto/self refresh functionality. Designed with 200 terminals and a rectangular DIMM package style, it operates within a voltage range of 1.70V to 1.90V, with a nominal supply voltage of 1.8V. The memory organization is 128Mx72, offering a total density of 9663676416 bits. This module is suitable for applications requiring high-speed data access and is commonly found in networking equipment, industrial automation, and aerospace and defense systems.

Additional Information

Series: W3HG264M72RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N200
Memory_Density9663676416.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization128MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals200
Number_of_Words134217728.0000000000000000
Number_of_Words_Code128M
Operating_ModeSynchronous
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
W3HG264M72EER806PD4IMG

DDR DRAM Module, 128MX72, CMOS

product image
W3HG264M72EER665PD4IMG

DDR DRAM Module, 128MX72, 0.45ns, CMOS

product image
W3HG264M72EER665PD4MG

DDR DRAM Module, 128MX72, 0.45ns, CMOS