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W3HG264M72EEU806D6MG

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W3HG264M72EEU806D6MG

DDR DRAM Module, 128MX72, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation W3HG264M72EEU806D6MG is a DDR DRAM Module from the W3HG264M72 series. This component is organized as 128M words by 72 bits, providing a total memory density of 128M words. It operates in a synchronous mode with a dual bank page burst access mode and supports auto/self refresh functionality. The module utilizes CMOS technology and operates with a supply voltage range of 1.70V to 1.90V, with a nominal voltage of 1.8V. The operating temperature range is from 0.0°C to 85.0°C. This DDR DRAM module is suitable for applications in aerospace and defense, industrial automation, and high-performance computing. The component is packaged in a 240-terminal DIMM form factor.

Additional Information

Series: W3HG264M72RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N240
Memory_Density9663676416.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization128MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals240
Number_of_Words134217728.0000000000000000
Number_of_Words_Code128M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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