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W3HG264M72EEU665PD4IGG

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W3HG264M72EEU665PD4IGG

DDR DRAM Module, 128MX72, 0.45ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation W3HG264M72EEU665PD4IGG is a DDR DRAM module from the W3HG264M72 series. This component offers a memory organization of 128M x 72 bits, providing a total density of 128M words. It operates in synchronous mode with a maximum access time of 0.45 nanoseconds. Key features include dual bank page burst access mode and support for auto/self refresh functions. The module operates within a temperature range of -40°C to +85°C and requires a supply voltage between 1.70V and 1.90V, with a nominal value of 1.8V. This CMOS technology component is packaged in a 200-terminal DIMM form factor. Applications for this type of memory component are found in high-performance computing, networking infrastructure, and industrial automation systems.

Additional Information

Series: W3HG264M72RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max0.4500000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N200
Memory_Density9663676416.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization128MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals200
Number_of_Words134217728.0000000000000000
Number_of_Words_Code128M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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