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W3HG264M72EEU534PD4IGG

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W3HG264M72EEU534PD4IGG

DDR DRAM Module, 128MX72, 0.5ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation W3HG264M72EEU534PD4IGG is a DDR DRAM module from the W3HG264M72 series. This component features a memory organization of 128Mx72, delivering a 0.5ns access time. It operates in synchronous mode with a dual bank page burst access mode and supports auto/self refresh functionality. The module is designed for a supply voltage range of 1.70V to 1.90V, with a nominal value of 1.8V. Operating temperature spans from -40.0°C to 85.0°C. This CMOS technology module, identified by JESD-30 code R-XDMA-N200, is primarily utilized in the aerospace, defense, and high-performance computing sectors, leveraging its high bandwidth and density.

Additional Information

Series: W3HG264M72RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max0.5000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N200
Memory_Density9663676416.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization128MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals200
Number_of_Words134217728.0000000000000000
Number_of_Words_Code128M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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