W3HG264M72EER806PD4SG
DDR DRAM Module, 128MX72, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation W3HG264M72EER806PD4SG is a DDR DRAM module with a 128MX72 organization, offering 9.66 Gb of memory density. This CMOS component operates synchronously with a 1.8V nominal supply voltage (1.7V to 1.9V range) and supports AUTO/SELF REFRESH functionality. The module features a single bank page burst access mode and is housed in a 200-terminal DIMM package. It is designed for applications requiring high-speed data buffering and storage, commonly found in telecommunications, computing, and industrial automation sectors. The operating temperature range for this component is 0°C to 85°C.
Additional Information
Series: W3HG264M72RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | SINGLE BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N200 |
| Memory_Density | 9663676416.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 128MX72 |
| Memory_Width | 72 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 200 |
| Number_of_Words | 134217728.0000000000000000 |
| Number_of_Words_Code | 128M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 1.90000 |
| Supply_Voltage_Min | 1.70000 |
| Supply_Voltage_Nom | 1.8 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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