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W3HG264M72EER806AD7SG

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W3HG264M72EER806AD7SG

DDR DRAM Module, 128MX72, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation W3HG264M72EER806AD7SG is a DDR DRAM module with a memory organization of 128Mx72, operating in synchronous mode. This CMOS component, part of the W3HG264M72 series, features a 72-bit memory width and supports dual bank page burst access. It incorporates auto/self-refresh functionality with a memory density of 9663676416 bits and a word count of 134217728. The module operates within a temperature range of 0.0°C to 85.0°C and requires a supply voltage between 1.700V and 1.900V (nominal 1.8V). This microelectronic assembly, packaged as a DIMM with 244 terminals, is suitable for applications in aerospace and defense, industrial automation, and high-performance computing.

Additional Information

Series: W3HG264M72RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N244
Memory_Density9663676416.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization128MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals244
Number_of_Words134217728.0000000000000000
Number_of_Words_Code128M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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