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W3HG264M72EER806AD7M

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W3HG264M72EER806AD7M

DDR DRAM Module, 128MX72, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation W3HG264M72EER806AD7M is a 128M x 72 bit DDR DRAM module utilizing CMOS technology. This component, part of the W3HG264M72 series, offers a synchronous operating mode with dual bank page burst access. It supports auto and self-refresh functionalities, crucial for low-power applications. The module operates within a temperature range of 0°C to 85°C and requires a supply voltage between 1.7V and 1.9V, with a nominal voltage of 1.8V. Designed for high-performance computing and data storage systems, this DDR DRAM module is suitable for applications in telecommunications, industrial automation, and aerospace. The component features a 244-terminal configuration and is classified under the JESD-30 code R-XDMA-N244.

Additional Information

Series: W3HG264M72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N244
Memory_Density9663676416.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization128MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals244
Number_of_Words134217728.0000000000000000
Number_of_Words_Code128M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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