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W3HG264M72EER534AD7SG

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W3HG264M72EER534AD7SG

DDR DRAM Module, 128MX72, 0.5ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation W3HG264M72EER534AD7SG is a DDR DRAM Module featuring a 128MX72 organization and a maximum access time of 0.5ns. This CMOS component operates synchronously with support for Dual Bank Page Burst access modes and includes Auto/Self Refresh functionality. The module provides a memory density of 9663676416 bits and operates within a temperature range of 0.0°C to 85.0°C. Its supply voltage ranges from 1.70V to 1.90V, with a nominal value of 1.8V. Applications for this component can be found in high-performance computing, networking infrastructure, and industrial automation systems where reliable and fast memory is critical.

Additional Information

Series: W3HG264M72RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max0.5000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N244
Memory_Density9663676416.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization128MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals244
Number_of_Words134217728.0000000000000000
Number_of_Words_Code128M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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