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W3HG264M72EER403AD7S

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W3HG264M72EER403AD7S

DDR DRAM Module, 128MX72, 0.6ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation W3HG264M72EER403AD7S is a DDR DRAM Module from the W3HG264M72 series. This component features a memory organization of 128MX72, providing a total memory density of 9663676416 bits. It operates with a synchronous, dual bank page burst access mode, offering a maximum access time of 0.6ns. The module supports auto and self-refresh functionalities, enhancing power efficiency. Its CMOS technology ensures reliable operation within an industrial temperature range of 0°C to 85°C. The W3HG264M72EER403AD7S is packaged as a 244-terminal DIMM and operates from a nominal supply voltage of 1.8V, with a range of 1.7V to 1.9V. This component is utilized in demanding applications across aerospace, defense, and high-performance computing industries.

Additional Information

Series: W3HG264M72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max0.6000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N244
Memory_Density9663676416.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization128MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals244
Number_of_Words134217728.0000000000000000
Number_of_Words_Code128M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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