W3HG264M64EEU806D4IGG
DDR DRAM Module, 128MX64, 0.4ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation W3HG264M64 series DDR DRAM Module, part number W3HG264M64EEU806D4IGG, offers a memory organization of 128MX64 with a maximum access time of 0.4ns. This CMOS component operates in synchronous mode with a dual bank page burst access mode and supports auto/self refresh functionalities. The module provides a memory density of 8,589,934,592 bits and utilizes a 64-bit memory width. Designed for operation across a temperature range of -40°C to 85°C, it has a nominal supply voltage of 1.8V, with a maximum of 1.90V. This DDR DRAM module is suitable for applications in computing, networking, and industrial systems requiring high-speed data storage and retrieval. The package style is a microelectronic assembly with a rectangular shape, conforming to the DIMM package code.
Additional Information
Series: W3HG264M64RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Access_Time_Max | 0.4000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N200 |
| Memory_Density | 8589934592.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 128MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 200 |
| Number_of_Words | 134217728.0000000000000000 |
| Number_of_Words_Code | 128M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 1.90000 |
| Supply_Voltage_Min | 1.70000 |
| Supply_Voltage_Nom | 1.8 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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