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W3HG264M64EEU805D4G

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W3HG264M64EEU805D4G

DDR DRAM Module, 128MX64, 0.4ns, CMOS, PDMA200

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation W3HG264M64 is a DDR DRAM module with a 128M x 64 organization, offering a total memory density of 8Gb. This component features a maximum access time of 0.4ns and operates with a nominal supply voltage of 1.8V. The module utilizes CMOS technology and provides 3-State output characteristics. Designed for dual in-line memory module (DIMM) applications, it has 200 terminals on a 0.600mm pitch. The operating temperature range is 0°C to 70°C. This module is suitable for applications requiring high-speed data buffering and storage, including telecommunications infrastructure and high-performance computing. The JESD30 code is R-PDMA-N200.

Additional Information

Series: W3HG264M64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_Time_Max0.4000000000000000
Clock_Frequency_Max400.00000
I_O_TypeCOMMON
JESD_30_CodeR-PDMA-N200
Memory_Density8589934592.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization128MX64
Memory_Width64
Number_of_Terminals200
Number_of_Words134217728.0000000000000000
Number_of_Words_Code128M
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeDIMM
Package_Equivalence_CodeDIMM200,24
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles8192
Standby_Current_Max0.112000000000000
Supply_Current_Max1416.000000000000000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_Pitch0.600
Terminal_PositionDual

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