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W3HG264M64EEU665D4IGG

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W3HG264M64EEU665D4IGG

DDR DRAM Module, 128MX64, 0.45ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

Quality Control: Learn More

Microsemi Corporation W3HG264M64 series DDR DRAM module, part number W3HG264M64EEU665D4IGG. This 128M x 64 memory component offers a maximum access time of 0.45 ns, operating with a synchronous dual bank page burst mode. It supports auto and self-refresh functionalities with a nominal supply voltage of 1.8V, ranging from 1.70V to 1.90V. The device operates across an industrial temperature range of -40°C to 85°C. This CMOS technology module is housed in a 200-terminal DIMM package. Applications for this component include telecommunications infrastructure, industrial automation, and high-performance computing.

Additional Information

Series: W3HG264M64RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max0.4500000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N200
Memory_Density8589934592.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization128MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals200
Number_of_Words134217728.0000000000000000
Number_of_Words_Code128M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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