W3HG264M64EEU534D4IG
DDR DRAM Module, 128MX64, 0.5ns, CMOS, PDMA200Manufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation W3HG264M64 DDR DRAM Module, part number W3HG264M64EEU534D4IG, offers 8Gb of memory capacity with a 128M x 64 organization. This CMOS module operates with a maximum clock frequency of 266MHz and features a fast access time of 0.5ns. It supports common I/O with 3-state output characteristics and is designed with a 200-terminal DIMM package, adhering to the R-PDMA-N200 JESD-30 code. Operating within a temperature range of -40°C to +85°C, this module is suitable for demanding applications in aerospace, defense, and industrial sectors. The nominal supply voltage is 1.8V, with a standby current of 112mA and a maximum supply current of 1216mA. Refresh cycles are managed via 8192 refresh periods.
Additional Information
Series: W3HG264M64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 0.5000000000000000 |
| Clock_Frequency_Max | 266.00000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PDMA-N200 |
| Memory_Density | 8589934592.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 128MX64 |
| Memory_Width | 64 |
| Number_of_Terminals | 200 |
| Number_of_Words | 134217728.0000000000000000 |
| Number_of_Words_Code | 128M |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIMM |
| Package_Equivalence_Code | DIMM200,24 |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Refresh_Cycles | 8192 |
| Standby_Current_Max | 0.112000000000000 |
| Supply_Current_Max | 1216.000000000000000 |
| Supply_Voltage_Nom | 1.8 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Pitch | 0.600 |
| Terminal_Position | Dual |
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