W3HG264M64EEU534D4G
DDR DRAM Module, 128MX64, 0.5ns, CMOS, PDMA200Manufacturer: Microsemi Corporation
Categories: DRAMs
Quality Control: Learn More
Microsemi Corporation W3HG264M64 DDR DRAM Module, part number W3HG264M64EEU534D4G, offers a 128M x 64 memory organization with a 0.5ns access time. This CMOS technology module operates with a nominal supply voltage of 1.8V and supports a maximum clock frequency of 266MHz. Featuring a 200-terminal DIMM package (JESD-30 Code R-PDMA-N200), it is designed for applications requiring high-performance memory solutions. Typical industries utilizing this component include telecommunications, industrial automation, and defense systems. The module supports 8192 refresh cycles and has an operating temperature range of 0°C to 70°C.
Additional Information
Series: W3HG264M64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 0.5000000000000000 |
| Clock_Frequency_Max | 266.00000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PDMA-N200 |
| Memory_Density | 8589934592.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 128MX64 |
| Memory_Width | 64 |
| Number_of_Terminals | 200 |
| Number_of_Words | 134217728.0000000000000000 |
| Number_of_Words_Code | 128M |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIMM |
| Package_Equivalence_Code | DIMM200,24 |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Refresh_Cycles | 8192 |
| Standby_Current_Max | 0.112000000000000 |
| Supply_Current_Max | 1216.000000000000000 |
| Supply_Voltage_Nom | 1.8 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Pitch | 0.600 |
| Terminal_Position | Dual |
Request a Quote
Clients Also Buy
W3HG264M64EEU534AD4IGG
DDR DRAM Module, 128MX64, 0.5ns, CMOS, PDMA200
W3HG264M64EEU403AD4IGG
DDR DRAM Module, 128MX64, 0.6ns, CMOS, PDMA200
W3HG264M64EEU665AD4IGG
DDR DRAM Module, 128MX64, 0.45ns, CMOS, PDMA200