W3HG264M64EEU403D4IG
DDR DRAM Module, 128MX64, 0.6ns, CMOS, PDMA200Manufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation W3HG264M64 series DDR DRAM Module, part number W3HG264M64EEU403D4IG, offers 8 Gb of memory capacity with a 128M x 64 organization. This CMOS component features a maximum access time of 0.6ns and supports a clock frequency up to 200MHz. Operating within a -40°C to +85°C temperature range, it utilizes COMMON I/O and 3-State output characteristics. The module is housed in a 200-terminal plastic/epoxy DIMM package with a 0.6mm terminal pitch, designed for dual in-line placement. Applications include high-performance computing, networking infrastructure, and industrial automation systems requiring robust memory solutions.
Additional Information
Series: W3HG264M64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 0.6000000000000000 |
| Clock_Frequency_Max | 200.00000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PDMA-N200 |
| Memory_Density | 8589934592.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 128MX64 |
| Memory_Width | 64 |
| Number_of_Terminals | 200 |
| Number_of_Words | 134217728.0000000000000000 |
| Number_of_Words_Code | 128M |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIMM |
| Package_Equivalence_Code | DIMM200,24 |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Refresh_Cycles | 8192 |
| Standby_Current_Max | 0.112000000000000 |
| Supply_Current_Max | 1184.000000000000000 |
| Supply_Voltage_Nom | 1.8 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Pitch | 0.600 |
| Terminal_Position | Dual |
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