W3HG256M72AER806AD6MG
DDR DRAM Module, 256MX72, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation W3HG256M72AER806AD6MG is a 256M x 72 DDR DRAM module utilizing CMOS technology. This module offers a memory density of approximately 19.3 Gbits with a synchronous operating mode and a 240-terminal DIMM package. Key features include a four-bank page burst access mode and support for auto/self refresh. Operating within a temperature range of 0.0°C to 85.0°C, it requires a supply voltage between 1.70V and 1.90V, with a nominal value of 1.8V. This component is suitable for applications in telecommunications, networking, and industrial control systems where high-speed memory is critical.
Additional Information
Series: W3HG256M72RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N240 |
| Memory_Density | 19327352832.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 256MX72 |
| Memory_Width | 72 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 240 |
| Number_of_Words | 268435456.0000000000000000 |
| Number_of_Words_Code | 256M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 1.90000 |
| Supply_Voltage_Min | 1.70000 |
| Supply_Voltage_Nom | 1.8 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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