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W3HG256M72AER534AD6IMG

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W3HG256M72AER534AD6IMG

DDR DRAM Module, 256MX72, 0.5ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation W3HG256M72AER534AD6IMG is a DDR DRAM module from the W3HG256M72 series. This component features a memory organization of 256Mx72, providing a total memory density of 19.3 Gb. It operates in synchronous mode with a maximum access time of 0.5 ns, employing a CMOS technology. The module supports a four-bank page burst access mode and includes auto/self-refresh functionality. It is designed with a 240-terminal DIMM package style and operates within a supply voltage range of 1.70V to 1.90V, with a nominal voltage of 1.8V. This component is suitable for applications in telecommunications, industrial automation, and high-performance computing where reliable and high-speed memory is critical.

Additional Information

Series: W3HG256M72RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max0.5000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N240
Memory_Density19327352832.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization256MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals240
Number_of_Words268435456.0000000000000000
Number_of_Words_Code256M
Operating_ModeSynchronous
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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