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W3HG256M72AER403AD6IMG

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W3HG256M72AER403AD6IMG

DDR DRAM Module, 256MX72, 0.6ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation W3HG256M72AER403AD6IMG is a DDR DRAM module from the W3HG256M72 series. This component features a memory organization of 256Mx72 with a maximum access time of 0.6ns, utilizing CMOS technology. It supports a four-bank page burst access mode and incorporates auto/self refresh capabilities. The module operates synchronously with a nominal supply voltage of 1.8V, ranging from 1.70V to 1.90V. Its memory density is approximately 19.3 Gbit, with a word count of 268,435,456. This high-performance memory solution is suitable for demanding applications across industries such as telecommunications, data storage, and industrial automation. The component is presented in a 240-terminal DIMM package.

Additional Information

Series: W3HG256M72RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max0.6000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N240
Memory_Density19327352832.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization256MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals240
Number_of_Words268435456.0000000000000000
Number_of_Words_Code256M
Operating_ModeSynchronous
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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