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W3HG2256M72ACER665AD6IMG

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W3HG2256M72ACER665AD6IMG

DDR DRAM Module, 512MX72, 0.45ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation W3HG2256M72ACER665AD6IMG is a DDR DRAM module with a 512M x 72 organization, providing 36 Gigabits of memory density. This component operates with a maximum access time of 0.45ns in a synchronous, CMOS technology. Key features include dual bank page burst access mode and auto/self-refresh capabilities. The module utilizes a 240-terminal DIMM package and supports a nominal supply voltage of 1.8V, with a range of 1.7V to 1.9V. This device is suitable for applications requiring high-speed memory, such as in telecommunications infrastructure, defense systems, and high-performance computing.

Additional Information

Series: W3HG2256M72RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max0.4500000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N240
Memory_Density38654705664.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization512MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals240
Number_of_Words536870912.0000000000000000
Number_of_Words_Code512M
Operating_ModeSynchronous
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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