W3HG2256M64ECEU403D4MG
DDR DRAM Module, 512MX64, 0.6ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation W3HG2256M64ECEU403D4MG is a DDR DRAM Module from the W3HG2256M64 series. This component features a memory organization of 512Mx64 with a maximum access time of 0.6ns. It operates in synchronous mode with a dual bank page burst access mode and supports auto/self refresh functionalities. The module is designed for a supply voltage range of 1.70V to 1.90V, with a nominal voltage of 1.8V. Operating temperatures are specified from 0°C to 85°C. This CMOS technology-based memory component is suitable for applications in networking, telecommunications, and industrial automation where high-speed data buffering and storage are critical.
Additional Information
Series: W3HG2256M64RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Access_Time_Max | 0.6000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N200 |
| Memory_Density | 34359738368.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 512MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 200 |
| Number_of_Words | 536870912.0000000000000000 |
| Number_of_Words_Code | 512M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 1.90000 |
| Supply_Voltage_Min | 1.70000 |
| Supply_Voltage_Nom | 1.8 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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