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W3HG2128M72EER806PD4MG

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W3HG2128M72EER806PD4MG

DDR DRAM Module, 256MX72, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation W3HG2128M72EER806PD4MG is a 256MX72 DDR DRAM module, part of the W3HG2128M72 series. This CMOS component offers a memory density of 19.3Gb and operates in synchronous mode with a dual bank page burst access mode. Key features include auto/self refresh capabilities, with self-refresh functionality explicitly supported. The module is packaged as a 200-terminal DIMM, designed for through-hole mounting. It operates within a supply voltage range of 1.700V to 1.900V, with a nominal voltage of 1.8V. This component is suitable for applications requiring high-speed data storage and retrieval, including networking, telecommunications, and industrial automation systems.

Additional Information

Series: W3HG2128M72RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N200
Memory_Density19327352832.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization256MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals200
Number_of_Words268435456.0000000000000000
Number_of_Words_Code256M
Operating_ModeSynchronous
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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