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W3HG2128M72EER806D4MG

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W3HG2128M72EER806D4MG

DRAM Module, 256MX72, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation W3HG2128M72EER806D4MG is a 256M x 72 Synchronous DRAM Module utilizing CMOS technology. This component operates with a dual bank page burst access mode and supports auto/self refresh functionality. It features a memory density of approximately 19.3 Gbits and is housed in a 200-terminal DIMM package. The module is designed for operation within a temperature range of 0.0°C to 85.0°C, with a nominal supply voltage of 1.8V, ranging from 1.70V to 1.90V. This memory solution is suitable for high-performance computing, networking infrastructure, and industrial automation applications.

Additional Information

Series: W3HG2128M72RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XZMA-N200
Memory_Density19327352832.0000000000000000
Memory_IC_TypeDRAM MODULE
Memory_Organization256MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals200
Number_of_Words268435456.0000000000000000
Number_of_Words_Code256M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionZIG-ZAG

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