W3HG2128M72AEF806F1MAG
DDR DRAM Module, 256MX72, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation's W3HG2128M72AEF806F1MAG is a 240-pin DDR DRAM Module with a memory organization of 256M x 72. This CMOS component offers a memory density of approximately 19.33 GB and supports a multi-bank page burst access mode. It features auto/self-refresh capabilities and operates in a synchronous mode. The module is designed for applications requiring high-speed data access and is suitable for use within an operating temperature range of 0.0°C to 95.0°C. The supply voltage range is 1.700V to 1.900V, with a nominal voltage of 1.8V. This component is commonly utilized in telecommunications, networking, and computing infrastructure sectors.
Additional Information
Series: W3HG2128M72RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | MULTI BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N240 |
| Memory_Density | 19327352832.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 256MX72 |
| Memory_Width | 72 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 240 |
| Number_of_Words | 268435456.0000000000000000 |
| Number_of_Words_Code | 256M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 95.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 1.90000 |
| Supply_Voltage_Min | 1.70000 |
| Supply_Voltage_Nom | 1.8 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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