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W3HG2128M72AEF665F2MBG

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W3HG2128M72AEF665F2MBG

DDR DRAM Module, 256MX72, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation W3HG2128M72AEF665F2MBG is a DDR DRAM Module with a memory organization of 256M x 72. This CMOS component operates synchronously with a multi-bank page burst access mode. It supports auto and self-refresh functionalities and is housed in a 240-terminal DIMM package. The module operates within a temperature range of 0.0°C to 95.0°C and requires a supply voltage between 1.70V and 1.90V, with a nominal value of 1.8V. This memory device is suitable for applications in networking, telecommunications, and industrial control systems.

Additional Information

Series: W3HG2128M72RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeMULTI BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N240
Memory_Density19327352832.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization256MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals240
Number_of_Words268435456.0000000000000000
Number_of_Words_Code256M
Operating_ModeSynchronous
Operating_Temperature_Max95.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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