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W3HG2128M72AEF665F1SAG

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W3HG2128M72AEF665F1SAG

DDR DRAM Module, 256MX72, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation W3HG2128M72AEF665F1SAG is a 256M x 72 DDR DRAM Module, operating with CMOS technology. This synchronous memory component offers a memory density of 2304MBytes. It features multi-bank page burst access mode and supports auto/self refresh functionality. The module operates within a temperature range of 0.0°C to 95.0°C with a nominal supply voltage of 1.8V, with a maximum of 1.90V. Designed with a 240-terminal DIMM package, it is suitable for applications in the aerospace, defense, and industrial sectors.

Additional Information

Series: W3HG2128M72RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeMULTI BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N240
Memory_Density19327352832.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization256MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals240
Number_of_Words268435456.0000000000000000
Number_of_Words_Code256M
Operating_ModeSynchronous
Operating_Temperature_Max95.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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