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W3HG2128M64EEU805XD4MG

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W3HG2128M64EEU805XD4MG

Synchronous DRAM Module, 256MX8, 0.4ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation W3HG2128M64 is a Synchronous DRAM Module with a memory organization of 256M x 8, providing a total memory density of 2147483648 bits. This CMOS component operates synchronously and features a maximum access time of 0.4ns. The module utilizes a DUAL BANK PAGE BURST access mode and supports AUTO/SELF REFRESH functionalities. It is housed in a Rectangular DIMM package with a MICROELECTRONIC ASSEMBLY style, measuring 67.60mm in length and 3.80mm in width. Operating voltage ranges from 1.7V to 1.9V, with a nominal voltage of 1.8V. This component is suitable for applications in telecommunications, industrial automation, and computing systems requiring high-speed memory solutions.

Additional Information

Series: W3HG2128M64RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width3.8000
TechnologyCMOS
Length67.6000
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max0.4000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N200
Memory_Density2147483648.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization256MX8
Memory_Width8
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals200
Number_of_Words268435456.0000000000000000
Number_of_Words_Code256M
Operating_ModeSynchronous
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Seated_Height_Max30.0000
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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