W3HG2128M64EEU805D4ISG
DDR DRAM Module, 256MX64, 0.4ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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The Microsemi Corporation W3HG2128M64 is a DDR DRAM Module with a memory organization of 256MX64, offering a total memory density of 17,179,869,184 bits. This component features a maximum access time of 0.4ns and operates using CMOS technology. It supports multi-bank page burst access modes and includes auto/self refresh functionality. The module is designed for synchronous operation and has a specified operating temperature range of -40°C to +85°C. Its supply voltage ranges from 1.70V to 1.90V, with a nominal value of 1.8V. This DDR DRAM module is suitable for applications in high-performance computing, networking infrastructure, and industrial automation where reliable and fast memory is critical. The W3HG2128M64 series component is presented in a 200-terminal DIMM package.
Additional Information
Series: W3HG2128M64RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | MULTI BANK PAGE BURST |
| Access_Time_Max | 0.4000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N200 |
| Memory_Density | 17179869184.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 256MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 200 |
| Number_of_Words | 268435456.0000000000000000 |
| Number_of_Words_Code | 256M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 1.90000 |
| Supply_Voltage_Min | 1.70000 |
| Supply_Voltage_Nom | 1.8 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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