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W3HG2128M64EEU665DD4ISG

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W3HG2128M64EEU665DD4ISG

DDR DRAM Module, 256MX64, 0.45ns, CMOS, PDMA200

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation W3HG2128M64EEU665DD4ISG is a DDR DRAM module from the W3HG2128 series. This component features a memory organization of 256M x 64, providing a total memory density of 17.18 Gbits. It operates with a maximum access time of 0.45 ns and a clock frequency up to 333 MHz. The module utilizes CMOS technology and COMMON I/O type with 3-State output characteristics. Designed with a 200-terminal DIMM package, it supports 8192 refresh cycles and operates within an industrial temperature range of -40°C to +85°C. The nominal supply voltage is 1.8V. This component is commonly found in applications within the computing and networking industries.

Additional Information

Series: W3HG2128RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_Time_Max0.4500000000000000
Clock_Frequency_Max333.00000
I_O_TypeCOMMON
JESD_30_CodeR-PDMA-N200
Memory_Density17179869184.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization256MX64
Memory_Width64
Number_of_Terminals200
Number_of_Words268435456.0000000000000000
Number_of_Words_Code256M
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeDIMM
Package_Equivalence_CodeDIMM200,24
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles8192
Standby_Current_Max0.240000000000000
Supply_Current_Max2400.000000000000000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_Pitch0.600
Terminal_PositionDual

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