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W3HG2128M64EEU665D6IGG

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W3HG2128M64EEU665D6IGG

DDR DRAM Module, 256MX64, 0.45ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation W3HG2128M64EEU665D6IGG is a DDR DRAM Module with a memory organization of 256Mx64, offering a total density of 17,179,869,184 bits. This component operates in synchronous mode with a maximum access time of 0.45ns. Key features include a four-bank page burst access mode, auto/self-refresh capabilities, and a CMOS technology. The module is designed for a supply voltage range of 1.70V to 1.90V, with a nominal value of 1.8V. Operating temperature spans from -40°C to 85°C. This 240-terminal component, packaged as a DIMM, is suitable for applications in computing, networking, and industrial automation.

Additional Information

Series: W3HG2128M64RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max0.4500000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N240
Memory_Density17179869184.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization256MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals240
Number_of_Words268435456.0000000000000000
Number_of_Words_Code256M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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